Search for dissertations about: "Schottky contact"

Showing result 21 - 25 of 29 swedish dissertations containing the words Schottky contact.

2. 21. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

   Author : S. A. Perez-Garcia; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

   Abstract : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. READ MORE

4. 22. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

   Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

5. 23. Ag2S-Based Flexible Memristors for Neuromorphic Computing

   Author : Yuan Zhu; Zhen Zhang; Qing Cao; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ag2S film; flexible memristor; resistance switching; CMOS-compatible integration; neuromorphic computing;

   Abstract : Memristive crossbar arrays hold the great promise for fast and energy efficient neuromorphic computing due to their parallel data storage and processing capabilities. As the key component, memristor should achieve stable resistance switching (RS) characteristics with low energy inputs and be compatible with complementary metal–oxide–semiconductor (CMOS) technology. READ MORE

6. 24. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors

   Author : Erik Danielsson; KTH; []
   Keywords : silicon carbide; gallium nitride; device simulation; bipolar junction transistor; heterojunction; heterojunction bipolar transistor; current-voltage measurement; capacitance-voltage measurement; self-heating;

   Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE

7. 25. High resolution electrical characterization of III-V materials and devices

   Author : Olivier Douheret; Srinivasan Anand; Wilfried Vandervorst; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; condensed matter; electrics; electrical; materials science; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : The continuing shrinkage of semiconductor devices towards nanoscale features and increased functionality has prompted a strong need for high-resolution characterization tools capable of mapping the electrical properties with nanoscale lateral resolution. In this regard, scanning capacitance microscopy (SCM) scanning spreading resistance microscopy (SSRM) and Kelvin probe force microscopy (KPFM) have emerged as powerful techniques. READ MORE