Search for dissertations about: "Schottky junction"

Showing result 1 - 5 of 18 swedish dissertations containing the words Schottky junction.

  1. 1. Junction barrier schottky rectifiers in silicon carbide

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Fanny Dahlquist; KTH.; [2001]
    Keywords : Silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifieer; Power rectifier; Unipolar devices; Punch-through design;

    Abstract : .... READ MORE

  2. 2. Junction Barrier Schottky Rectifiers in Silicon Carbide

    University dissertation from Kista : Mikroelektronik och informationsteknik

    Author : Fanny Dahlquist; KTH.; [2002]
    Keywords : silicon carbide; JBS rectifier; Junction Barrier Schottky JBS ; Schottky rectifier; MPS rectifier; power rectifier; punch-through design; power loss; high blocking voltage;

    Abstract : .... READ MORE

  3. 3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Jang-Kwon Lim; KTH.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE

  4. 4. Modelling of Terahertz Planar Schottky Diodes

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Aik-Yean Tang; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Abstract : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. READ MORE

  5. 5. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Erik Velander; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE