Search for dissertations about: "Schottky junction"
Showing result 11 - 15 of 22 swedish dissertations containing the words Schottky junction.
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11. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE
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12. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors
Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE
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13. Semiconductor-ionic Materials for Low Temperature Solid Oxide Fuel Cells
Abstract : Solid oxide fuel cell (SOFC) is considered as an attractive candidate for energy conversion within the fuel cell (FC) family due to several advantages including environment friendly, use of non-noble materials and fuel flexibility. However, due to high working temperatures, conventional SOFC faces many challenges relating to high operational and capital costs besides the limited selection of the FC materials and their compatibility issues. READ MORE
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14. Analysis of the piezoelectric and current transport properties of zinc oxide nanostructures grown on fiber
Abstract : It seems that nowadays the world is becoming as a small village due to the advancement in communication devices technology. These devices are playing an important role in the wellbeing of our life as almost each and every person is utilizing at least one of these devices. READ MORE
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15. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Abstract : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. READ MORE