Search for dissertations about: "Schottky layer"

Showing result 1 - 5 of 29 swedish dissertations containing the words Schottky layer.

  1. 1. Modelling of Terahertz Planar Schottky Diodes

    Author : Aik-Yean Tang; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Abstract : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. READ MORE

  2. 2. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; [2007]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  3. 3. Schottky barriers and Schottky barrier based devices on Si and SiC

    University dissertation from Institutionen för elektronisk systemkonstruktion

    Author : Christer Fröjdh; KTH.; [1998]
    Keywords : ;

    Abstract : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. READ MORE

  4. 4. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Maryam Olyaei; KTH.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE

  5. 5. DX Centers in AlGaAs

    University dissertation from Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

    Author : Yingbo Jia; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DX center; AlGaAs; GaAs AlGaAs multi-layer structures; C-V; DLTS; electric field dependence; positive-U and negative-U models; Schottky diodes; Halvledarfysik; Fysicumarkivet A:1996:Jia; Semiconductory physics; silicon; metastable states.;

    Abstract : This thesis presents a study of DX center related phenomena in silicon doped AlGaAs and in GaAs/AlGaAs multi-layer structures. A variety of experimental techniques such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), single shot capacitance, thermally stimulated capacitance (TSCAP), admittance spectroscopy, photocapacitance, and photoconductivity have been used. READ MORE