Search for dissertations about: "Schottky layer"

Showing result 1 - 5 of 30 swedish dissertations containing the words Schottky layer.

  1. 1. Modelling of Terahertz Planar Schottky Diodes

    Author : Aik-Yean Tang; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; S-parameter extraction; Electro-thermal; Schottky diodes; Skin effect; Electromagnetic; Frequency multipliers; High-power frequency multiplier; Current crowding; Proximity effect; Submillimetre wave generation and detection; Geometric modelling; Gallium Arsenide;

    Abstract : This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses of the geometry- dependent parasitics and the diode chip thermal management. Moving towards higher operating frequencies, the electromagnetic couplings pose significant limitations on the diode performance. READ MORE

  2. 2. RF and Noise Optimization of Pseudomorphic inP HEMT Technology

    Author : Mikael Malmkvist; [2006]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; fabrication; high electron mobility transistor HEMT ; optimization; Schottky layer; InAlAs; Indium phosphide InP ; MMIC.; noise; pseudomorphic; modeling; InGaAs;

    Abstract : The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the electronic device utilized for the highest frequency and/or the lowest noise applications known to date for analog transistor-based circuits. Hence it is of both scientific and technological interest to explore the InP HEMT for even further improvement in device performance. READ MORE

  3. 3. Scaling of InGaAs/InAlAs and InAs/AlSb HEMTs for microwave/mm-wave applications

    Author : Malin Borg; [2007]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; metamorphic; InGaAs; gate length; pseudomorphic; InAs; AlSb; InP; Schottky layer; High electron mobility transistor HEMT ; drain bias;

    Abstract : The InGaAs/InAlAs high electron mobility transistor (HEMT) offers the highest maximum frequency of oscillation fmax and the lowest noise performance (NFmin) for microwave/mm-wave receivers. Similar to other device technologies, the performance of the InGaAs/InAlAs HEMT has gradually been improved by device scaling. READ MORE

  4. 4. Schottky barriers and Schottky barrier based devices on Si and SiC

    University dissertation from Institutionen för elektronisk systemkonstruktion

    Author : Christer Fröjdh; KTH.; [1998]
    Keywords : ;

    Abstract : This work is devoted to a study of the formation andcharacterisation of Schottky Barriers on differentsemiconductors with an extension to the development of devicesbased on Schottky barriers. The major part of the work has beendone on 6H-SiC, but Si and SiGe alloys have also been used. READ MORE

  5. 5. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Maryam Olyaei; KTH.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE