Search for dissertations about: "Schottky layer"

Showing result 11 - 15 of 37 swedish dissertations containing the words Schottky layer.

  2. 11. Atom Probe Field Ion Microscopy of Surface Zones, Coatings and Interfaces

    Author : Anders Kvist; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ag GaAs; ohmiccontact; Au GaAs; Schottky contact; Cu3Au; APFIM; AuGe GaAs; gradient sintering; cemented carbides; CVD;

    Abstract : This thesis is focused on developingmethods for high resolution microanalysis of coatings on a substrate, andsurface zones of a bulk sample using atom probe field ion microscopy,APFIM. The APFIM technique is described and some examples of its applications to semiconductors,cemented carbides and intermetallic compounds are given. READ MORE

  4. 12. Atom-Probe Field-Ion Microscopy of Electronic Materials

    Author : Qiu-Hong Hu; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Au GaAs; ohmic contact; superconductors; oxygen ordering; AuGe GaAs; defects; Ag GaAs; Schottky contact; YBa2Cu3O6 delta; APFIM;

    Abstract : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. READ MORE

  5. 13. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Author : Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

  6. 14. Integration of metallic source/drain contacts in MOSFET technology

    Author : Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

    Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

  7. 15. Thermally stable electrical contacts to 6H silicon carbide

    Author : Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE