Search for dissertations about: "Schottky mosfet"
Showing result 1 - 5 of 12 swedish dissertations containing the words Schottky mosfet.
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1. Integration of metallic source/drain contacts in MOSFET technology
Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE
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2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE
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3. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE
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4. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE
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5. Schottky Contacs on Silicon Nanowires
Abstract : This thesis demonstrates the effect of charge on Schottky barrier height for metal contacts at the end surfaces of silicon nanowires. It is shown, by measurements and analytical models, how the effective electron barrier is lowered by a positive charge introduced into an oxide embedding the wire. READ MORE
