Search for dissertations about: "Semiconductor Materials. Linköping University"

Showing result 1 - 5 of 12 swedish dissertations containing the words Semiconductor Materials. Linköping University.

  2. 1. Conformal chemical vapor deposition of boron carbide thin films

    Author : Arun Haridas Choolakkal; Jens Birch; Henrik Pedersen; Hans Högberg; Tobias Törndahl; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The sustainability goals of the modern world and the fascinating properties of sub-micron scale materials promote development of materials in thin film form. Thin films are materials that have thicknesses ranging from sub-nanometer to several micrometers, synthesized by various deposition techniques. READ MORE

  4. 2. Metastable orthorhombic Ta3N5 thin films grown by magnetron sputter epitaxy

    Author : Jui-Che Chang; Ching-Lien Hsiao; Jens Birch; Grzegorz Greczynski; Denis Music; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The semiconductor tritantalum pentanitride (Ta3N5) is a promising green-energy material for photoelectrolyzing water to produce oxygen and hydrogen owing to its proper bandgap of 2.0 ± 0.2 eV and band positions to redox potential of water. READ MORE

  5. 3. Gas-sensors for Automobile Interiors

    Author : Eva-Lotta Kalman; Haugen John-Erik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The concentration of pollutants in the car compartment air is influenced not only by neighboring vehicles, but also by pollutants originating from the car's interior trim materials. These pollutants may cause nuisance and even pose a safety risk as some condense on the windscreen and form an oily film that dims the screen. READ MORE

  6. 4. Epitaxy of group III-nitride materials using different nucleation schemes

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Daniela Gogova; Alice Hospodková; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wave-lengths, covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE

  7. 5. Hot-wall MOCVD of N-polar group-III nitride materials

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE