Search for dissertations about: "Shi-Li Zhang"

Showing result 1 - 5 of 13 swedish dissertations containing the words Shi-Li Zhang.

  1. 1. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Author : Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE

  2. 2. Graphene Implementation Study in Semiconductor Processing

    Author : Patrik Ahlberg; Zhibin Zhang; Shi-Li Zhang; Ulf Jansson; Eleanor Campbell; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Graphene, with its two-dimensional nature and unique properties, has for over a decade captured enormous interests in both industry and academia. This work tries to answer the question of what would happen to graphene when it is subjected to various processing conditions and how this would affect the graphene functionality. READ MORE

  3. 3. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Author : Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

  4. 4. On the Road to Graphene Biosensors

    Author : Malkolm Hinnemo; Zhi-Bin Zhang; Shi-Li Zhang; Jörgen Olsson; Max Lemme; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Graphene; Biosensors; Microprocessing; Photolithography; Surface Physics; Raman Spectroscopy; Transistors; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : Biosensors are devices that detect biological elements and then transmit a readable signal. Biosensors can automatize diagnostics that would otherwise have to be performed by a physician or perhaps not be possible to perform at all. Current biosensors are however either limited to particular diseases or prohibitively expensive. READ MORE

  5. 5. Silicon Nanowire Based Electronic Devices for Sensing Applications

    Author : Qitao Hu; Zhen Zhang; Shi-Li Zhang; Si Chen; Jeehwan Kim; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; silicon nanowire; field-effect transistor; nanoelectromechanical resonator; CMOS-compatible; multiplexed detection; single charge detection; quantum sensing; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. READ MORE