Search for dissertations about: "Shi-Li Zhang"
Showing result 11 - 15 of 15 swedish dissertations containing the words Shi-Li Zhang.
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11. Ink-jet printing of thin film transistors based on carbon nanotubes
Abstract : The outstanding electrical and mechanical properties of single-walled carbon nanotubes (SWCNTs) may offer solutions to realizing high-mobility and high-bendability thin-film transistors (TFTs) for the emerging flexible electronics. This thesis aims to develop low-cost ink-jet printing techniques for high-performance TFTs based on pristine SWCNTs. READ MORE
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12. Engineering Surfaces of Solid-State Nanopores for Biomolecule Sensing
Abstract : Nanopores have emerged as a special class of single-molecule analytical tool that offers immense potential for sensing and characterizing biomolecules such as nucleic acids and proteins. As an alternative to biological nanopores, solid-state nanopores present remarkable versatility due to their wide-range tunability in pore geometry and dimension as well as their excellent mechanical robustness and stability. READ MORE
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13. Integration of metallic source/drain contacts in MOSFET technology
Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE
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14. Detection of Bio-analytes with Streaming Current : From Fundamental Principles to Novel Applications
Abstract : A biosensor based on streaming current is a new and relatively unexplored subject with significant potential. This thesis attempts to gain a deeper understanding of the governing principles, and then exploit them to further improve its performance as well as develop novel applications. READ MORE
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15. Interaction of Ni with SiGe for electrical contacts in CMOS technology
Abstract : This thesis investigates the reactive formation of Ni mono-gernanosilicide, NiSi1-uGeu, for contact metallization of future CMOS devices where Si1-xGex can be present in the gate, source and drain of a MOSFET. Although the investigation has been pursued with a strong focus on materials aspects, issues related to process integration in MOSFETs both on conventional bulk Si and ultra-thin body SOI have been taken into consideration. READ MORE