Search for dissertations about: "SiC BJT"

Showing result 1 - 5 of 19 swedish dissertations containing the words SiC BJT.

  2. 1. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Author : Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. READ MORE

  4. 2. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Author : Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

  5. 3. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

    Author : Muhammad Waqar Hussain; Ana Rusu; Florin Udrea; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. READ MORE

  6. 4. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    Author : Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Abstract : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. READ MORE

  7. 5. SiC Readout IC for High Temperature Seismic Sensor System

    Author : Ye Tian; Carl-Mikael Zetterling; Ana Rusu; Philip A. Mawby; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; bipolar junction transistor BJT ; integrated circuit IC ; sigma-delta Σ∆ ; data conversion; operational amplifier OpAmp ; VBIC; SPICE Gummel-poon; high-temperature; electromechanical; accelerometer; capacitive sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Over the last decade, electronics operating at high temperatures have been increasingly demanded to support in situ sensing applications such as automotive, deep-well drilling and aerospace. However, few of these applications have requirements above 460 °C, as the surface temperature of Venus, which is a specific target for the seismic sensing application in this thesis. READ MORE