Search for dissertations about: "SiC CRYSTAL"

Showing result 1 - 5 of 51 swedish dissertations containing the words SiC CRYSTAL.

  2. 1. Growth and characterization of SiC and GaN

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  4. 2. Optical Studies of Periodic Microstructures in Polar Materials

    Author : Herman Högström; Carl Gustaf Ribbing; Clivia M. Sotomayor Torres; Uppsala universitet; []
    Keywords : Engineering physics; polaritonic; polar; photonic crystal; surface phonon polariton; multilayer; Reststrahlen; SiC; SiO2; Teknisk fysik;

    Abstract : The optical properties of matter are determined by the coupling of the incident electromagnetic radiation to oscillators within the material. The oscillators can be electrons, ions or molecules. Close to a resonance the dielectric function exhibits strong dispersion and may be negative. READ MORE

  5. 3. Deep levels in SiC

    Author : Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE

  6. 4. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

    Author : Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. READ MORE

  7. 5. The silicon vacancy in SiC

    Author : Erik Sörman; Jan Schmidt; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : SiC has for decades been considered to be a very promising semiconductor, but several problems related to the material quality, did earlier prevent an exploitation of the supreme electrical characteristics of the material. Now most of these problems have been overcome, high quality material can be grown and research around this material is going through an intense phase of development. READ MORE