Search for dissertations about: "SiC JFET"
Showing result 1 - 5 of 7 swedish dissertations containing the words SiC JFET.
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1. On SiC JFET converters: components, gate-drives and main-circuit conditions
Abstract : This thesis deals with Silicon Carbide Junction Field Effect Transistors (SiC JFETs) - how to use them to their full potential in power electronic circuits, how to model them in a power electronic simulation program, and how a gate drive can be built. To fully utilize the low on-state losses of SiC JFETs it is suggested that SiC JFETs should not be equipped with anti-parallel diodes. READ MORE
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2. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Abstract : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. READ MORE
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3. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE
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4. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE
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5. On Gate Drivers and Applications of Normally-ON SiC JFETs
Abstract : In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterparts. READ MORE