Search for dissertations about: "SiC MOS"

Showing result 1 - 5 of 10 swedish dissertations containing the words SiC MOS.

  2. 1. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

    Author : Fredrik Allerstam; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

    Abstract : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. READ MORE

  4. 2. Shallow traps at the SiO₂/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

    Abstract : .... READ MORE

  5. 3. Charge carrier dynamics at the SiO2/SiC interface

    Author : Mahdad Sadeghi; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface quality; SiO2 SiC metal oxide semiconductor MOS ; high frequency C-V measurement; oxidation of SiC; capacitance simulations; thermal non-equilibrium;

    Abstract : .... READ MORE

  6. 4. Detection and removal of traps at the SiO2/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  7. 5. Device characteristics of sublimation grown 4H-SiC layers

    Author : Rafal Ciechonski; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE