Search for dissertations about: "SiC deposition"
Showing result 1 - 5 of 80 swedish dissertations containing the words SiC deposition.
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1. Fluorinated SiC CVD
Abstract : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. READ MORE
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2. Fabrication and Characterization of 3C- and4H-SiC MOSFETs
Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE
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3. CVD solutions for new directions in SiC and GaN epitaxy
Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE
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4. Deep levels in SiC
Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE
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5. Vapor phase deposition of WO and WC
Abstract : WO3 and WC are two compounds that are widely used for a number of different thin film applications. In this thesis, these compounds have been deposited using two different deposition methods: atomic layer epitaxy (ALE) and chemical vapor deposition (CVD). READ MORE