Search for dissertations about: "SiC mesfet for High power"

Showing result 1 - 5 of 8 swedish dissertations containing the words SiC mesfet for High power.

  2. 1. Development of SiC MESFET Based MMIC Technology

    Author : Mattias Sudow; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high levelmixer; spiral inductor; via-hole;

    Abstract : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. READ MORE

  4. 2. Simulation and Optimization of SiC Field Effect Transistors

    Author : Kent Bertilsson; Hans-Erik Nilsson; Christian Brylinski; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiC; Device simulation; RF; power; MESFET; Elektronik; Electronics; Elektronik;

    Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. READ MORE

  5. 3. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  6. 4. Silicon Carbide Microwave Transistors and Amplifiers

    Author : Rolf Jonsson; Linköpings universitet; []
    Keywords : SiC; MESFET; Physical simulations; Microwave power amplifier; NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Ibis work deals with silicon carbide (SiC) metal semieonduetor field effect transistors (MESFETs) and microwave amplifiers using them. The wide bandgap (WBG) semiconductors silicon carbide and gallium nitride have a large potential for microwave power generation. READ MORE

  7. 5. Wide Bandgap MMIC Technology

    Author : Mattias Sudow; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

    Abstract : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. READ MORE