Search for dissertations about: "SiC sublimation epitaxy"

Showing result 1 - 5 of 10 swedish dissertations containing the words SiC sublimation epitaxy.

  2. 1. Growth and characterization of SiC and GaN

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  4. 2. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material

    Author : Valdas Jokubavičius; Mikael Syväjärvi; Rositsa Yakimova; Didier Chaussende; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. READ MORE

  5. 3. Device characteristics of sublimation grown 4H-SiC layers

    Author : Rafal Ciechonski; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  6. 4. High growth rate epitaxy of SiC: growth processes and structural quality

    Author : Mikael Syväjärvi; Robert F. Davis; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Silicon carbide (SiC) is a promising wide-bandgap semiconductor for applications such as high-power devices, high-voltage switches, high-temperature electronics and microwave components. The prospect of using this material is a large driving force for improving the material growth which is still quite immature in comparison with established semiconductor materials (e. READ MORE

  7. 5. Sublimation Growth and Performance of Cubic Silicon Carbide

    Author : Remigijus Vasiliauskas; Rositza Yakimova; Mikael Syväjärvi; Didier Chaussende; Linköpings universitet; []
    Keywords : ;

    Abstract : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. READ MORE