Search for dissertations about: "SiGe HBT"
Showing result 1 - 5 of 11 swedish dissertations containing the words SiGe HBT.
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1. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects
Abstract : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. READ MORE
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2. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Abstract : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. READ MORE
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3. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors
Abstract : .... READ MORE
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4. Wideband integrated circuits for optical communication systems
Abstract : The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. READ MORE
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5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors
Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE