Search for dissertations about: "Silicon Germanium"
Showing result 16 - 20 of 38 swedish dissertations containing the words Silicon Germanium.
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16. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Abstract : .... READ MORE
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17. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration
Abstract : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. READ MORE
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18. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits
Abstract : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. READ MORE
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19. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE
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20. Integration of epitaxial SiGe(C) layers in advanced CMOS devices
Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE