Search for dissertations about: "Silicon germanium carbon SiGeC"
Found 5 swedish dissertations containing the words Silicon germanium carbon SiGeC.
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1. Device design and process integration for SiGeC and Si/SOI bipolar transistors
Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE
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2. SiGeC Heterojunction Bipolar Transistors
Abstract : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. READ MORE
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3. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition
Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE
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4. Integration of epitaxial SiGe(C) layers in advanced CMOS devices
Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE
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5. Application of SiGe(C) in high performance MOSFETs and infrared detectors
Abstract : Epitaxially grown SiGe(C) materials have a great importance for many device applications. In these applications, (strained or relaxed) SiGe(C) layers are grown either selectively on the active areas, or on the entire wafer. READ MORE