Search for dissertations about: "Silicon nanowire based devices for More than More Applications"
Found
5 swedish dissertations containing the words Silicon nanowire based devices for More than More Applications.
-
-
Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;
Abstract :
Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE
-
-
Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;
Abstract :
Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE
-
Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;
Abstract :
The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE
-
Author : Ning Zhu; Lech Wosinski; Richard De La Rue; KTH; []
Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;
Abstract :
Optical devices based on Planar Lightwave Circuit (PLC) technology have well been studied due to their inherited advantages from Integrated Circuits (IC), such as: small size, high reliability, mass production and potential integration with microelectronics. Among all the materials, silicon nanowire platform gains more and more interest. READ MORE
-
Author : Alessandro Prencipe; Katia Gallo; Val Zwiller; Mohammed Amin Baghban; Rachel Grange; KTH; []
Keywords : NATURVETENSKAP; NATURAL SCIENCES; Integrated optics; Electro-optics; Thin film lithium niobate; Phase shifted Bragg grating; Waveguide-integrated single photon detectors; Erbium implantation; Integrerad optik; elektrooptik; tunnfilmslitiumniobat; fasfo ̈rskjutet Bragg-gitter; V ̊agledare-integrerade singelfotondetektorer; Erbiumimplantation.; Optics and Photonics; Optik och fotonik;
Abstract :
Photonic devices play a fundamental role in today’s society and are a central building blocks for numerous applications, ranging from modern internet to sensing and manufacturing, and photonics is foreseen to be the backbone of future quantum internet and quantum communication systems thanks to the long coherence time of light. At variance with electronic integrated circuits, where silicon has been the material of election for many decades, in the case of photonic integrated circuits (PICs) there are numerous options available for the material substrate. READ MORE
-
