Search for dissertations about: "Silicon-Germanium SiGe"

Showing result 1 - 5 of 11 swedish dissertations containing the words Silicon-Germanium SiGe.

2. 1. Silicon Germanium heterojunction bipolar transistors : Large-signal modeling and low-frequency noise characterization aspects

   Author : Staffan Bruce; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Silicon Germanium; SiGe; Heterojunction Bipolar Transistor; HBT; Large-signal modeling; thermal time constant; low-frequency noise: coherence; transimpedance amplifier; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

   Abstract : In this thesis, aspects of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) are addressed. A physics-based electrical large-signal model including thermal dependence has been developed and is implemented using a commercially available simulator package. READ MORE

4. 2. High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

   Author : B. Gunnar Malm; KTH; []
   Keywords : Silicon-Germanium SiGe ; heterojunction bipolar transistor HBT ; low-frequency noise; high-frequency noise; harmonic distortion; linearity; device simulation; collector profile; epitaxial base integration; radio frequency RF ; radio frequency inte;

   Abstract : .... READ MORE

5. 3. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors

   Author : Johan Pejnefors; KTH; []
   Keywords : chemical vapor deposition CVD ; bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; epitaxy; poly-Si emitter; in situ doping; non-selective epitaxy NSEG ; loading effect; emissivity effect;

   Abstract : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. READ MORE

6. 4. Device design and process integration for SiGeC and Si/SOI bipolar transistors

   Author : Erik Haralson; KTH; []
   Keywords : Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

   Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE

7. 5. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors

   Author : Martin Sandén; KTH; []
   Keywords : bipolar junction transistor BJT ; heterojunction bipolar transistor HBT ; silicon-germanium SiGe ; polysilicon emitter; high-frequency measurement; low-frequency noise; noise modeling; hydrogen passivation; voltage controlled oscillator VCO ; pha;

   Abstract : .... READ MORE