Search for dissertations about: "TUNNEL FET"
Found 4 swedish dissertations containing the words TUNNEL FET.
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1. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform
Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE
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2. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
Abstract : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. READ MORE
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3. On the two forms of amylose-lipid complexes
Abstract : This thesis is about the formation of amylose-lipid complexes, and their properties. Two forms of superstructures can be identified. Complex form I has more randomly distributed helices, while the structure of form II is crystalline and therefore exhibits the typical V-pattern in X-ray diffraction analyses. READ MORE
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4. Electron Transport in Nanowire Quantum Devices
Abstract : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. READ MORE