Search for dissertations about: "Titanium Nitride TiN"

Showing result 1 - 5 of 22 swedish dissertations containing the words Titanium Nitride TiN.

2. 1. Towards a Chemisorption Model for Transition-Metal Nitrides and Carbides from Density-Functional Theory: A TiN and TiC Case Study

   Author : Aleksandra Vojvodic; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Titanium; Titanium nitride; Transition-metal nitrides and carbides;

   Abstract : Since the 1960's, a number of models for chemisorption on metals has beenpresented, most notably the Anderson-Grimley-Newns model for metals and thed-band model of Hammer and Nørskov for transition metals. The intention of this thesis is to explore the adsorption on transition-metal nitrides andcarbides, technologically interesting materials (in, e. READ MORE

4. 2. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

   Author : Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

   Abstract : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. READ MORE

5. 3. High-resolution characterization of TiN diffusion barrier layers

   Author : Marlene Mühlbacher; Lars Hultman; Christian Mitterer; Lars Johnson; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Diffusion; TiN; Microstructure; Transmission electron microscopy; TEM; Atom probe tomography; APT;

   Abstract : Titanium nitride (TiN) films are widely applied as diffusion barrier layers in microelectronic devices. The continued miniaturization of such devices not only poses new challenges to material systems design, but also puts high demands on characterization techniques. READ MORE

6. 4. Metal Gate Technology for Advanced CMOS Devices

   Author : Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
   Keywords : Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

   Abstract : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. READ MORE

7. 5. Alternative back contacts for CZTS thin film solar cells

   Author : Sven Englund; Charlotte Platzer Björkman; Jonathan J. Scragg; Levent Gütay; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CZTS; thin film solar cells; back contacts; passivation; interface; titanium nitride; ATO; antimony-doped tin oxide; transparent back contact; CZTS; tunnfilmssolceller; bakkontakter; passivering; gränsskikt; mellanskikt; titannitrid; antimondopad tennoxid; ATO; transparent bakkontakt; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

   Abstract : In this thesis, alternative back contacts for Cu2ZnSnS4 (CZTS) thin film solar cells were investigated. Back contacts for two different configurations were studied, namely traditional single-junction cells with opaque back contacts and transparent back contacts for possible use in either tandem or bifacial solar cell configuration. READ MORE