Search for dissertations about: "Tm2O3"

Found 3 swedish dissertations containing the word Tm2O3.

  2. 1. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Author : Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE

  4. 2. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    Author : Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE

  5. 3. Ge/high-k Gates for Monolithic 3D Integration

    Author : Laura Zurauskaite; Per-Erik Hellström; Mikael Östling; Francois Andrieu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Germanium; high-k; monolithic; 3D; germanium on insulator; GOI; germanium oxide; GeOx; Si-cap; Si-passivation; interface state density; Dit; low temperature; MOSFET; germanium; hög-permittivitetsdielektrika; monolitisk; 3D; germaniumpå- isolator; GOI; germaniumoxid; GeOx; kiselskikt; kiselpassivering; gränssnittsfälltäthet; Dit; låg temperatur; MOSFET; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. READ MORE