Search for dissertations about: "Tsunenobu Kimoto"

Found 3 swedish dissertations containing the words Tsunenobu Kimoto.

  2. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Author : Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

  4. 2. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

  5. 3. Electrically active defects in 4H silicon carbide

    Author : Liutauras Storasta; Tsunenobu Kimoto; Linköpings universitet; []
    Keywords : ;

    Abstract : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. READ MORE