Search for dissertations about: "Vanya Darakchieva"

Showing result 11 - 15 of 16 swedish dissertations containing the words Vanya Darakchieva.

  2. 11. Surface characterization of 2D transition metal carbides (MXenes)

    Author : Ingemar Persson; Per Persson; Justinas Palisaitis; Johanna Rosén; Vanya Darakchieva; Vincent Mauchamp; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Research on two-dimensional (2D) materials is a rapidly growing field owing to the wide range of new interesting properties found in 2D structures that are vastly different from their three-dimensional (3D) analogues. In addition, 2D materials embodies a significant surface area that facilitates a high degree of surface reactions per unit volume or mass, that is imperative in many applications such as catalysis, energy storage, energy conversion, filtration, and single molecule sensing. READ MORE

  4. 12. Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

    Author : Dat Tran; Plamen Paskov; Vanya Darakchieva; Mattias Thorshell; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. READ MORE

  5. 13. Thermal conductivity of wide and ultra-wide bandgap semiconductors

    Author : Dat Tran; Plamen Paskov; Vanya Darakchieva; Martin Kuball; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-nitrides; β-Ga2O3; Thermal conductivity; Thermal transport;

    Abstract : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). READ MORE

  6. 14. Structural and elastic properties of InN and InAlN with different surface orientations and doping

    Author : Mengyao Xie; Vanya Darakchieva; Jens Birch; Enrique Calleja; Linköpings universitet; []
    Keywords : ;

    Abstract : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. READ MORE

  7. 15. Hot-wall MOCVD of N-polar group-III nitride materials

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Elke Meissner; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE