Search for dissertations about: "Vapour Phase Epitaxy"
Showing result 1 - 5 of 26 swedish dissertations containing the words Vapour Phase Epitaxy.
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1. Metall organic vapour phase epitaxy for advanced III-V devices
Abstract : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. READ MORE
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2. Semiconductor Nanowires: Epitaxy and Applications
Abstract : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. READ MORE
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3. Epitaxial Growth and Design of Nanowires and Complex Nanostructures
Abstract : This thesis describes the epitaxial growth of III-V semiconductor nanowires using Au seed particles, and the design of more complex three-dimensional branched structures from these wires. Growth was performed by metallorganic vapour phase epitaxy, in which precursor molecules for the semiconductor material components are introduced in a low-pressure vapour. READ MORE
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4. Microstructure aspects of transition metal carbide thin films
Abstract : Transition metal carbides are important refractory materials used in many thin film applications. In this thesis, several transition metal carbides have been deposited using different chemical vapour deposition (CVD) and evaporation processes. In particular, the phase composition and microstructure of these carbide films have been studied. READ MORE
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5. Chemical vapour deposition of sp2-hybridised B-C-N materials from organoborons
Abstract : Thin films of sp2-BN are promising materials for graphene and deep-UV optoelectronics. They are typically deposited by thermally activated chemical vapour deposition (CVD) from triethylboron (TEB) and ammonia (NH3) at 1500 °C, albeit in a narrow process window. READ MORE