Search for dissertations about: "Vertical process"

Showing result 1 - 5 of 244 swedish dissertations containing the words Vertical process.

  2. 1. Vertical III-V Nanowire MOSFETs

    Author : Olli-Pekka Kilpi; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE

  4. 2. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Author : Adam Jönsson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

  5. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistor

    Author : Elvedin Memisevic; Nanoelektronik; []
    Keywords : Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

    Abstract : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. READ MORE

  6. 4. High Aspect Ratio Microstructures in Flexible Printed Circuit Boards : Process and Applications

    Author : Hanna Yousef; Klas Hjort; Mikael Lindeberg; Peter Leisner; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Engineering physics; flexible printed circuit boards; polyimide; through-hole vias; ion track technology; thermoelectricity; thermopiles; substrate integrated waveguides; millimeter wave devices; Teknisk fysik; Engineering physics; Teknisk fysik;

    Abstract : Flexible printed circuit boards (flex PCBs) are used in a wide range of electronic devices today due to their light weight, bendability, extensive wiring possibilities, and low-cost manufacturing techniques. The general trend in the flex PCB industry is further miniaturization alongside increasing functionality per device and reduced costs. READ MORE

  7. 5. Vertical Extension of Buildings

    Author : Rikard Nilsson; Avdelningen för Byggproduktion; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sustainability; Densification; energy-efficient renovation; Urban Development; Stakeholder;

    Abstract : Many policy targets have been developed with the aim of reaching a more sustainable development; more specifically, thestudied policies target energy use and urban growth. For example, by 2050 the aim is that the European Union will havereduced its greenhouse emissions by 90%. READ MORE