Search for dissertations about: "Wei-Xin Ni"
Found 5 swedish dissertations containing the words Wei-Xin Ni.
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1. Optical characterization of Silicon-based self-assembled nanostructures
Abstract : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. READ MORE
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2. Near-infrared photodetectors based on Si/SiGe nanostructures
Abstract : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. READ MORE
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3. Si-based structures for light emission and detection
Abstract : Efforts to improve the optical performance of the indirect bandgap semiconductor silicon (Si) has been a major subject of research in the field of Si photonics due to the promising applications of Si based light emitters and detectors for optical communication. With that motivation three different Si based material systems were investigated; Si:Er/O layered structures, SiGe quantum dots and SiSn nano structures, all grown using the technique of molecular beam epitaxy (MBE). READ MORE
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4. Materials and Processing Technologies for Advanced Electronic and Photonic Devices
Abstract : .... READ MORE
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5. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
Abstract : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. READ MORE