Search for dissertations about: "Wide bandgap"

Showing result 1 - 5 of 87 swedish dissertations containing the words Wide bandgap.

2. 1. Wide Bandgap MMIC Technology

   Author : Mattias Sudow; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

   Abstract : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. READ MORE

4. 2. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

5. 3. Thermal conductivity of wide and ultra-wide bandgap semiconductors

   Author : Dat Tran; Plamen Paskov; Vanya Darakchieva; Martin Kuball; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; III-nitrides; β-Ga2O3; Thermal conductivity; Thermal transport;

   Abstract : This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga2O3 binary compounds, and AlxGa1−xN, ScxAl1−xN, YxAl1−xN ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA). READ MORE

6. 4. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics

   Author : Juan Colmenares; Hans-Peter Nee; Leon M. Tolbert; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Gallium Nitride; Gate Driver; Harsh Environments; High Efficiency Converter; High Temperature; MOSFETs; Normally- ON JFETs; Reliability; Silicon Carbide; Wide-Band Gap Semiconductors; Electrical Engineering; Elektro- och systemteknik;

   Abstract : Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. READ MORE

7. 5. Bandgap Engineering of Lead-Free Halide Double Perovskites

   Author : Fuxiang Ji; Feng Gao; Feng Wang; Niclas Solin; David Mitzi; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Lead-free halide double perovskites; Metal doping alloying; Bandgap engineering; Atomic-level structure; Thermochromism;

   Abstract : Lead-free halide double perovskites (HDPs, A2BIBIIIX6) with attractive optical and electronic features are regarded as one of the most promising alternatives to overcome the toxicity and stability issues of lead halide perovskites. They provide a wide range of possible combinations and rich substitutional chemistry with interesting properties for various optoelectronic devices. READ MORE