Search for dissertations about: "Work breakdown structure"
Showing result 1 - 5 of 38 swedish dissertations containing the words Work breakdown structure.
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1. Numerical Simulations of Long Spark and Lightning Attachment
Abstract : The research work presented here is concerned with numerical simulations of two different electrical phenomena: Long gap electrical discharges under switching impulses and the lightning attachment process associated with positive upward leaders. The development of positive upward leaders and the progression of discharges in long gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. READ MORE
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2. Structure design for perception of sweetness in food gels
Abstract : The production of foods with reduced sugar contents is desired and asked for. However, when reducing the sugar concentration, sweetness and structure and texture properties are altered. There is thus a need for a deeper understanding of the complex relations between a food’s structure, texture and taste. READ MORE
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3. Large Eddy Simulation of Turbulent Swirling Flows in Combustor Related Geometries
Abstract : This thesis deals with the physics of turbulent swirling flows. Large eddy simulation (LES) method is used to investigate the vortex breakdown process, the precessing vortex core (PVC), and the effect of swirl number and flow field configuration on swirling flows. The study is based on an open source CFD code, \textit{OpenFoam}. READ MORE
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4. Turbulence-resolving Simulations of Swirling Flows
Abstract : A series of numerical investigations is undertaken using a wide range of turbulence mod-els including conventional and non-conventional URANS models, hybrid URANS-LESmethods and LES to capture a large variety of physical mechanisms that produce pres-sure pulsations in the swirling flows. The available knowledge about these pulsations,which are usual in hydropower, are still far from complete. READ MORE
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5. Electronic Structure of intrinsic and doped Silicon Carbide and Silicon
Abstract : Silicon (Si) is the most exploited material within the semiconductor device technology, mainly due to its relatively good electron and hole mobilities and the simplicity to fabricate and process the material. Silicon carbide (SiC) has, however, a wider band gap, a higher breakdown electric field strength, and a higher thermal conductivity, which makes SiC one of the most promising materials for high-power devices. READ MORE