Search for dissertations about: "a-Si"

Showing result 16 - 20 of 37 swedish dissertations containing the word a-Si.

  2. 16. Towards the Integration of Carbon nanostructures into CMOS technology

    Author : Mohammad Kabir; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transmission electron microscopy TEM .; chemical vapour deposition CVD ; electron beam lithography EBL ; carbon nanotube CNT ; silicidation; atomic force microscopy AFM ; carbon nanofiber CNF ; Complementary metal oxide semiconductor CMOS ; dc-glow discharge plasma; growth mechanism; metal catalyst; scanning electron microscopy SEM ;

    Abstract : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. READ MORE

  4. 17. Silicon Nitride Based Coatings Grown by Reactive Magnetron Sputtering

    Author : Tuomas Hänninen; Hans Högberg; Susann Schmidt; Lars Hultman; Arutiun P. Ehiasarian; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Silicon nitride and silicon nitride-based ceramics have several favorable material properties, such as high hardness and good wear resistance, which makes them important materials for the coating industry. This thesis focuses the synthesis of silicon nitride, silicon oxynitride, and silicon carbonitride thin films by reactive magnetron sputtering. READ MORE

  5. 18. VCSEL and Integration Techniques for Wavelength-Multiplexed Optical Interconnects

    Author : Mehdi Jahed; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; wavelength setting; optical interconnects; mode control; vertical-cavity surface-emitting laser; flip-chip integration; wavelength-division-multiplexing; silicon photonics;

    Abstract : GaAs-based vertical-cavity surface-emitting lasers (VCSELs) are dominating short-reach optical interconnects (OIs) due to their high modulation speed, low power consumption, circular output beam and low fabrication cost. Such OIs provide the high bandwidth connectivity needed for interconnecting servers and switches in data centers. READ MORE

  6. 19. Workpiece steels protecting cutting tools from wear : A study of the effects of alloying elements on material transfer and coating damage mechanisms

    Author : Toshiharu Aiso; Staffan Jacobson; Urban Wiklund; Staffan Söderberg; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metal cutting; Steel; Cutting tools; Transfer; Coating; Sliding; Teknisk fysik med inriktning mot tribomaterial; Engineering Science with specialization in Tribo Materials;

    Abstract : The vision of this thesis is to improve the machinability of workpiece steels. Workpiece material frequently transfers to the cutting tools during machining, and the transfer layers then forming on the tools may give both good and bad effects on machining performance and tool life. READ MORE

  7. 20. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    Author : MICHAEL ANDERSSON; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Abstract : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. READ MORE