Search for dissertations about: "acceptor doping"
Showing result 6 - 10 of 33 swedish dissertations containing the words acceptor doping.
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6. Doping of high-Al-content AlGaN grown by MOCVD
Abstract : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. READ MORE
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7. Proton conductivity in acceptor-doped lanthanide based pyrochlore oxides
Abstract : A high interest in developing new materials for SOFC applications in the temperature range of approximately 200–500 C has been growing lately. The lower activation energies for proton (H+) mobility can give higher conductivity in this temperature range. READ MORE
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8. Doping effects on the structural and optical properties of GaN
Abstract : Today there is a strong drive towards higher efficiency light emitters and devices for power electronics based on GaN and its ternary compounds. Device performance can be improved in several ways on the material level. READ MORE
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9. Engineering Epitaxial Graphene for Quantum Metrology
Abstract : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. READ MORE
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10. The Effect of Mg Doping on Optical and Structural Properties of GaN
Abstract : Mg is the most commonly used p-type dopant for GaN, however the impact of Mg incorporation on structural, morphological and optical properties of GaN is still not fully understood. Another research challenge is to understand and improve the properties of nonpolar GaN as it allows the fabrication of more efficient optoelectronic devices due to the absence of polarization fields. READ MORE