Search for dissertations about: "alloy graded buffer"

Found 4 swedish dissertations containing the words alloy graded buffer.

2. 1. Optimization of Metamorphic Materials on GaAs Grown by MBE

   Author : Yuxin Song; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

   Abstract : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. READ MORE

4. 2. Novel Materials and Technologies for IR Optoelectronic Applications

   Author : Yuxin Song; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; GaSbBi; dilute bismide; InAs GaSb type-II superlattice; metamorphic; InSbBi; alloy graded buffer; threading dislocation; infrared; molecular beam epitaxy;

   Abstract : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. READ MORE

5. 3. Design and Characterization of 1.3-1.6 µm Metamorphic Materials and Lasers on GaAs

   Author : Ivar Tångring; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor laser; molecular beam epitaxy; InGaAs quantum well; graded buffer layer; metamorphic heterostructures;

   Abstract : The development of fiber-optical networks for broad-band access is expected to create a huge market for laser transmitters in the 1.3-1.55 µm wavelength range. The existing InP-based lasers have poor temperature stability. READ MORE

6. 4. Metamorphic Heterostructures and Lasers on GaAs

   Author : Ivar Tångring; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

   Abstract : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. READ MORE