Search for dissertations about: "backscattering power"

Showing result 1 - 5 of 7 swedish dissertations containing the words backscattering power.

  1. 1. Ultrasound Contrast Agents Loaded with Magnetic Nanoparticles Acoustic and Mechanical Characterization

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : VeeraVenkata Satyanarayana Kothapalli; Lars-Åke Brodin; Jan Engvall; [2013]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ultrasound contrast agents; SPION nanoparticles; harmonic oscillation; backscattering power; attenuation coefficient; phase velocity; nonlinear equation of motion;

    Abstract : The current methodologies in body scanning diagnostic uses different simultaneous imaging modalities like Ultrasound (US), magnetic resonance imaging (MRI), single photon emission tomography (SPECT) and positron emission tomography (PET). The field requires combination of different modalities for effective use in clinical diagnostics. READ MORE

  2. 2. Material migration in tokamaks Erosion-deposition patterns and transport processes

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Armin Weckmann; Marek Rubel; Rudolf Neu; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEXTOR; fusion; plasma physics; transport; migration; tracers; tokamak; limiter; divertor; high-Z; ion beam analysis; Rutherford backscattering; Nuclear reaction analysis; Elastic recoil detection analysis; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Controlled thermonuclear fusion may become an attractive future electrical power source. The most promising of all fusion machine concepts is called a tokamak. The fuel, a plasma made of deuterium and tritium, must be confined to enable the fusion process. It is also necessary to protect the wall of tokamaks from erosion by the hot plasma. READ MORE

  3. 3. Interactive RFID for Industrial and Healthcare Applications

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Jue Shen; Lirong Zheng; Hannu Tenhunen; Bengt Oelmann; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Radio-Frequency Identification RFID ; Electrochromic EC display; energy harvesting; Ultra-Wideband UWB ; remote monitoring; Internet-of-Things IoT .;

    Abstract : This thesis introduces the circuit and system design of interactive Radio-Frequency Identification (RFID) for Internet of Things (IoT) applications. IoT has the vision of connectivity for anything, at anytime and anywhere. READ MORE

  4. 4. Synthesis and Characterisation of Magnetron Sputtered Alumina-Zirconia Thin Films

    University dissertation from Institutionen för fysik, kemi och biologi

    Author : David Huy Trinh; Hans Högberg; Anders Hårsta; [2006]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Alumina; Zirconia; NaKeywords: Alumina; Zirconia; Nanocomposite; Sputtering; Thin-Film; PVD; TEM; EELS; TECHNOLOGY Materials science; TEKNIKVETENSKAP Teknisk materialvetenskap;

    Abstract : Alumina-Zirconia thin films were grown on a range of substrates using dual magnetron sputtering. Film growth was achieved at a relatively low temperature of 450 °C and at higher temperatures up to 810 °C. The films were grown on well-defined surfaces such as silicon (100) but also on industrially relevant substrates such as hardmetal (WC-Co). READ MORE

  5. 5. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers

    University dissertation from Institutionen för fysik, kemi och biologi

    Author : Timo Seppänen; Robert F. Davis; [2006]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Thin film; Magnetron Sputter Epitaxy MSE ; NATURAL SCIENCES Physics; NATURVETENSKAP Fysik;

    Abstract : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. READ MORE