Search for dissertations about: "backscattering power"
Showing result 6 - 8 of 8 swedish dissertations containing the words backscattering power.
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6. Growth and Characterization of Metastable Wide Band-Gap Al1-xInxN Epilayers
Abstract : InN to 6.2 eV for AlN, which opens possibilities to engineer opto-electronic devices operating from infra-red to deep ultra-violet wavelengths. Al1-xInxN with the alloy composition x~0.2 can also be used as a lattice-matched electron confinement layer for GaN based electronic devices. READ MORE
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7. Structural and elastic properties of InN and InAlN with different surface orientations and doping
Abstract : Group–III nitrides, InN, GaN, AlN, and their alloys, have revolutionized solid state lighting and continue to attract substantial research interest due to their unique properties and importance for optoelectronics and electronics. Among the group–III nitrides, InN has the lowest effective electron mass and the highest electron mobility, which makes it suitable for high–frequency and high power devices. READ MORE
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8. Spin generation and detection in low-dimensional semiconductors
Abstract : Semiconductor spintronics and opto-spintronics have intrigued intense attention as they promise great advance of contemporary semiconductor information technology with integrated spin functionalities. Over the last few decades, the development of growth techniques and discovery of topological band structures have led to the explosion of a wide range of low-dimensional semiconductor materials, many of which have superior properties compared to their bulk ancestors. READ MORE