Search for dissertations about: "bipolar junction transistor"
Showing result 1 - 5 of 26 swedish dissertations containing the words bipolar junction transistor.
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1. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors
Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE
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2. High power bipolar junction transistors in silicon carbide
Abstract : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. READ MORE
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3. On Reliability of SiC Power Devices in Power Electronics
Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE
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4. Characterisation of bipolar transistors : parameter extraction and degradation dynamics
Abstract : .... READ MORE
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5. Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
Abstract : .... READ MORE