Search for dissertations about: "bipolar switching"

Showing result 1 - 5 of 18 swedish dissertations containing the words bipolar switching.

2. 1. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

   Author : Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

   Abstract : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. READ MORE

4. 2. Cost-effective Cells for High-power Modular Multilevel Converters

   Author : Matthijs Heuvelmans; Staffan Norrga; Hans-Peter Nee; Rik De Doncker; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMC; modular multilevel converter; ARCP; IGCT; soft-switching; ZVS; ZCS; snubber; thyristor; SCR; silicon controlled rectifier; HVDC; STATCOM; Electrical Engineering; Elektro- och systemteknik;

   Abstract : The modular multilevel converter (MMC) topology was introduced in 2003and has since been receiving considerable attention from industry and academia.Notable benefits compared to two- or three-level voltage source convertersare its scalability, low switching losses, low output filter requirementsand ease of adding redundancy combined with fail-safe operation. READ MORE

5. 3. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Author : Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

   Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE

6. 4. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Author : Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE

7. 5. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

   Author : Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

   Abstract : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. READ MORE