Search for dissertations about: "border traps"

Found 4 swedish dissertations containing the words border traps.

  2. 1. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  4. 2. Vertical Nanowire High-Frequency Transistors

    Author : Sofia Johansson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

    Abstract : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. READ MORE

  5. 3. Electrical Characterisation of III-V Nanowire MOSFETs

    Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE

  6. 4. Electron Tunneling and Field-Effect Devices in mm-Wave Circuits

    Author : Mikael Egard; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; negative differential conductance oscillator; resonant tunneling diode; ultra-wideband; impulse radio; Wavelet generator; MOSFET; nanowire; high frequency characterization; Fysicumarkivet A:2012:Egard;

    Abstract : Short high-frequency electromagnetic pulses, also referred to as wavelets, are considered for use in various short-range impulse based ultra-wideband applications, such as communication, imaging, radar, spectroscopy, and localization. This thesis investigates field-effect and tunneling based semiconductor devices and their operation in millimeter-wave (mm-wave) impulse transceivers. READ MORE