Search for dissertations about: "buried heterostructure"

Showing result 1 - 5 of 11 swedish dissertations containing the words buried heterostructure.

2. 1. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

   Author : Carlos Angulo Barrios; KTH; []
   Keywords : semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

   Abstract : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. READ MORE

4. 2. Metall organic vapour phase epitaxy for advanced III-V devices

   Author : Nils Nordell; Sture Petersson; Gunnar Landgren; Ferdinand Scholz; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metalorganic vapour phase epitaxy MOVPE ; III-V compound semiconductors; epitaxial uniformity; p-type doping profiles; epitaxial regrowth; chlorine-MOVPE; buried heterostructure laser; heterostructure bipolar transistor; Electrical Engineering; Elektro- och systemteknik;

   Abstract : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. READ MORE

5. 3. Epitaxy, analysis and application of semi-insulating III-V materials

   Author : David Söderström; KTH; []
   Keywords : InP; GaInP; semi-insulating materials; iron doping; ruthenium doping; HVPE; diffusion; deep levels; capture cross sections; resistivity analysis; buried heterostructure laser;

   Abstract : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. READ MORE

6. 4. Scanning capacitance microscopy for semiconductor characterisation

   Author : Olle Bowallius; KTH; []
   Keywords : SCM; SSRM; InP; Si; Buried heterostructure laser; Doping; Regrowth; Capacitance; P-n junction;

   Abstract : .... READ MORE

7. 5. New Methods in the growth of InP on Si and Regrowth of Semi-insulating InP for Photonic Devices

   Author : Wondwosen Tilahun Metaferia; Sebastian Lourdudoss; Eric Tournié; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : This thesis addresses new methods in the growth of indium phosphide on silicon for enabling silicon photonics and nano photonics as well as efficient and cost-effective solar cells. It also addresses the renewal of regrowth of semi-insulating indium phosphide for realizing buried heterostructure quantum cascade lasers with high power and wall plug efficiency for sensing applications. READ MORE