Search for dissertations about: "buried oxide"
Showing result 1 - 5 of 20 swedish dissertations containing the words buried oxide.
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1. The Buried Oxide of Silicon on Insulator Materials
Abstract : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. READ MORE
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2. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth
Abstract : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. READ MORE
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3. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids
Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE
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4. Vacuum Ultraviolet Scanning Photoelectron Microscopy, Instrumentation & Applications
Abstract : This thesis describes the design and characterisation of a vacuum ultraviolet scanning photoelectron microscope as well as results from studies of laterally inhomogeneous surfaces. The instrument utilises synchrotron radiation from an undulator at the 550 MeV storage ring at the MAX-laboratory. READ MORE
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5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Abstract : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. READ MORE