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Showing result 1 - 5 of 33 swedish dissertations matching the above criteria.

2. 1. Infrared and CO studies of the young stellar object L1551 IRS5 and its associated bipolar outflow

   Author : C. V. Malcolm Fridlund; Stockholms universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : .... READ MORE

4. 2. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

5. 3. Electrical Characterization of III-V Nanostructure

   Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
   Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

   Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

6. 4. Deposition of high quality thin dielectrics on silicon

   Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

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7. 5. Ultrathin gate oxides for future SiGe CMOS devices

   Author : Alok Sareen; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gate oxide; ultrathin; C-V; SiGe; valence band offset;

   Abstract : .... READ MORE