Search for dissertations about: "c-v"

Showing result 6 - 10 of 33 swedish dissertations containing the word c-v.

  2. 6. Thermally stable electrical contacts to 6H silicon carbide

    Author : Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE

  4. 7. Detection and removal of traps at the SiO2/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  5. 8. Shallow traps at the SiO₂/SiC interface

    Author : Halldor Olafsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; deep level transient spectroscopy DLTS ; capacitance-voltage C-V ; metal-oxide-semiconductor MOS ; thermally stimulated current TSC ; interface states;

    Abstract : .... READ MORE

  6. 9. Charge carrier dynamics at the SiO2/SiC interface

    Author : Mahdad Sadeghi; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface quality; SiO2 SiC metal oxide semiconductor MOS ; high frequency C-V measurement; oxidation of SiC; capacitance simulations; thermal non-equilibrium;

    Abstract : .... READ MORE

  7. 10. Role of corticotropin-releasing factor, somatostatin and leptin in vagal nerve function and control of gastric emptying

    Author : Ulrika Smedh; Karolinska Institutet; Karolinska Institutet; []
    Keywords : ;

    Abstract : The overall aim of this thesis was to study the effects of centrally acting CRF and leptin, and peripherally acting somatostatin on gastric emptying of glucose. Freely moving rats bearing chronic intragastric fistulas received intragastric infusions (1.0 ml/min) of glucose (12.5 % or 25 %) during 6-18 min. READ MORE