Search for dissertations about: "capacitance-voltage"
Showing result 1 - 5 of 27 swedish dissertations containing the word capacitance-voltage.
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1. Processing and characterization of GaN/SiC heterojunctions and SiC bipolar transistors
Abstract : Silicon Carbide (SiC) and Gallium Nitride (GaN) are bothwide bandgap semiconductors that have been suggested for highpower, high voltage, and high temperature applications. Themost investigated SiC devices so far are the Schottky diode,PiN diode and the field effect transistor. READ MORE
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2. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications
Abstract : .... READ MORE
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3. Thermally stable electrical contacts to 6H silicon carbide
Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform. Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE
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4. Detection and removal of traps at the SiO2/SiC interface
Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE
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5. Shallow traps at the SiO₂/SiC interface
Abstract : .... READ MORE