Search for dissertations about: "carrier capture cross section"
Found 4 swedish dissertations containing the words carrier capture cross section.
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1. Gallium nitride templates and its related materials for electronic and photonic devices
Abstract : .... READ MORE
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2. Carrier Lifetime Relevant Deep Levels in SiC
Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE
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3. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material
Abstract : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. READ MORE
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4. Electronic properties of intrinsic defects and impurities in GaN
Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE