Search for dissertations about: "charge compensation"
Showing result 16 - 20 of 27 swedish dissertations containing the words charge compensation.
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16. Probing nonlinear electrical properties at the nanoscale : Studies in multifrequency AFM
Abstract : Nanostructured materials promise great advances in diverse and active research fields such as energy harvesting and storage, corrosion prevention and high-density memories. Electrical characterization at the nanometer scale is key to understanding and optimizing the performance of these materials, and therefore central to the progress of nanotechnology. READ MORE
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17. Design and characterization of 64K pixels chips working in single photon processing mode
Abstract : Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 μm x 55 μm designed in a commercial 0. READ MORE
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18. Investigating ageing mechanisms in electric vehicle batteries : A multiscale approach to material analysis
Abstract : Electrifying passenger transport is a key strategy in combating global warming, with Li-ion batteries (LIBs) being the current go-to technology. Despite LIB’s satisfactory performance and carbon-neutral operation, lifetime and safety are still public concerns. READ MORE
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19. Electronic Properties of Diamond
Abstract : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties compared to other (wide bandgap) semiconductors make it desirable to develop single-crystalline epitaxial diamond films for many electronic device and detector applications. READ MORE
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20. Electron Paramagnetic Resonance studies of negative-U centers in AlGaN and SiC
Abstract : Silicon (Si) is the most commonly used n-type dopant in AlGaN, but the conductivity of Si-doped AlxGa1-xN was often reported to drop abruptly at high Al content (x>0.7) and the reason was often speculated to be due to either compensation by deep levels or self-compensation of the so-called DX (or negative-U) center. READ MORE