Search for dissertations about: "chemical mechanical polishing CMP"

Showing result 1 - 5 of 7 swedish dissertations containing the words chemical mechanical polishing CMP.

  2. 1. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing

    Author : Markus Forsberg; Jörgen Olsson; Jyrki Molarius; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; chemical mechanical polishing; chemical mechanical planarization; silicon; silicon dioxide; front end; shallow trench isolation; deep trench isolation; bipolar transistor; BiCMOS; wafer bonding; Elektronik; Electronics; Elektronik;

    Abstract : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. READ MORE

  4. 2. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration

    Author : Ali Asadollahi; Mikael Östling; Paul R. Berger; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic three dimensional M3D integration; strained germanium on insulator sGeOI pMOSFETs; silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs; Si0.5Ge0.5 strain-relaxed buffer SRB ; direct bonding; chemical mechanical polishing CMP ; compressively strained GeOI; tensile strained Si0.5Ge0.5OI;

    Abstract : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. READ MORE

  5. 3. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride

    Author : David Michael Martin; J. Olsson; I. Katardjiev; S. Gevorgian; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlN; FBAR; FPAR; CMP; SOI; Nickel Silicide; Wafer Bonding; Electronics; Elektronik; Elektronik; Electronics;

    Abstract : In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. READ MORE

  6. 4. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Author : Julius Hållstedt; KTH; []
    Keywords : Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE

  7. 5. SiGeC Heterojunction Bipolar Transistors

    Author : Erdal Suvar; KTH; []
    Keywords : Silicon-Germanium-Carbon SiGeC ; Heterojunction bipolar transistor HBT ; chemical vapor deposition CVD ; selective epitaxy; non-selective epitaxy; collector design; high-frequency measurement; dopant segregation; thermal stability;

    Abstract : Heterojunction bipolar transistors (HBT) based on SiGeC havebeen investigated. Two high-frequency architectures have beendesigned, fabricated and characterized. Different collectordesigns were applied either by using selective epitaxial growthdoped with phosphorous or by non-selective epitaxial growthdoped with arsenic. READ MORE