Search for dissertations about: "circuit cmos"

Showing result 1 - 5 of 128 swedish dissertations containing the words circuit cmos.

  1. 1. Reactors - Circuit Theory and Silicon Integrated Applications

    Author : Pietro Andreani; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Active Filters; Delay Lines; VCOs; Inductors; Circuit Theory; Capacitors; CMOS; Electronics; Elektronik;

    Abstract : This dissertation deals with reactive components in electric circuits, both as targets for a theoretical circuit analysis, and as devices implemented in silicon processes like CMOS. The frequency behavior of a general electric network is determined by the reactances (i.e. READ MORE

  2. 2. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  3. 3. Electrothermal Simulation in a Concurrent Waveform Relaxation Based Circuit Simulator

    Author : Magnus Wiklund; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Circuit synthesis; Bond graphs; Nullor; Circuit theory; Analog simulation; Circuit simulation; Multiprocessor computer; CONCISE; Parallel computation; Waveform relaxation; Thermal models; Transistor models; Electro-thermal simulation; Electro-thermal modeling; Translinear circuits; Electronics; Elektronik; Electrical engineering; Elektroteknik;

    Abstract : The main purpose of this work is to study methods to simulate electro-thermal effects in integrated circuits using CONCISE a waveform relaxation based circuit simulator. WR is a method that is suitable to run on a multi-computer with state of the art computing power. Especially CMOS VLSI circuits have been simulated successfully with WR. READ MORE

  4. 4. CMOS High Frequency Circuits for Spin Torque Oscillator Technology

    Author : Tingsu Chen; Ana Rusu; Jerzy Dabrowski; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave integrated circuit; CMOS; spin torque oscillator; Balun-LNA; wideband amplifier; on-chip bias-tee; multi-standard multi-band radios;

    Abstract : Spin torque oscillator (STO) technology has a unique blend of features, including but not limited to octave tunability, GHz operating frequency, and nanoscaled size, which makes it highly suitable for microwave and radar applications. This thesis studies the fundamentals of STOs, utilizes the state-of-art STO's advantages, and proposes two STO-based microwave systems targeting its microwave applications and measurement setup, respectively. READ MORE

  5. 5. Micro- and Millimeter Wave CMOS Beamforming Receivers

    Author : Andreas Axholt; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; beamforming; CMOS; front-end; microwave; millimeter wave; phase-locked loop; phased-array;

    Abstract : The available bandwidth in wireless communication systems, such as the 802.11 family, is very limited. Together with the ever increasing data traffic, this causes problems. New possibilities are, however, available thanks to wide license-free bandwidth allocated at higher frequencies. READ MORE