Search for dissertations about: "cooling electronic device"

Showing result 1 - 5 of 19 swedish dissertations containing the words cooling electronic device.

  2. 1. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Author : Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. READ MORE

  4. 2. Characterization and Compensation of Thermal Effects in GaN HEMT Technologies

    Author : Johan Bremer; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thermal coupling; thermal effects; thermal resistance; AlGaN GaN; temperature compensation.; electrothermal; characterization;

    Abstract : Further advancements with GaN based technologies relies on the ability to handle the heat flux, which consequently arises from the high power density. Advanced cooling techniques and thermal optimization of the technology are therefore prioritized research areas. READ MORE

  5. 3. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Author : Arash Edvin Risseh; Hans-Peter Nee; Torbjörn Thiringer; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. READ MORE

  6. 4. On-scalp MEG using high-Tc SQUIDs: Measuring brain activity with superconducting magnetometers

    Author : Christoph Pfeiffer; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high-Tc SQUID; neuroimaging; magnetoencephalography; localization; on-scalp MEG; sensor array; magnetometer;

    Abstract : This thesis describes work done towards realizing on-scalp magnetoencephalography (MEG) based on high critical temperature (high- T c) superconducting quantum interference device (SQUID) sensors. MEG is a non-invasive neuroimaging modality that records the magnetic fields produced by neural currents with good spatial and high temporal resolution. READ MORE

  7. 5. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE