Search for dissertations about: "cryogenic temperatures"

Showing result 1 - 5 of 37 swedish dissertations containing the words cryogenic temperatures.

  1. 1. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Author : Joel Schleeh; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE

  2. 2. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE

  3. 3. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Author : Joel Schleeh; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE

  4. 4. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Author : Eunjung Cha; Chalmers University of Technology; []
    Keywords : cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. READ MORE

  5. 5. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE